ECH8663R no. a1184-1/4 tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan sanyo semiconductors data sheet 72308pe ti im tc-00001535 specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. ECH8663R n-channel silicon mosfet general-purpose switching device applications features low on-resistance. built-in gate protection resistor. 2.5v drive. best suited for lib charging and discharging switch. common-drain type. halogen free compliance. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 30 v gate-to-source voltage v gss 12 v drain current (dc) i d 8a drain current (pulse) i dp pw 10 s, duty cycle 1% 60 a allowable power dissipation p d when mounted on ceramic substrate (900mm 2 ? 0.8mm) 1unit 1.4 w total dissipation p t when mounted on ceramic substrate (900mm 2 ? 0.8mm) 1.5 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0v 1 a gate-to-source leakage current i gss v gs = 8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 0.5 1.3 v forward transfer admittance ? yfs ? v ds =10v, i d =4a 5 8.5 s marking : tj continued on next page. ordering number : ena1184 www.datasheet.co.kr datasheet pdf - http://www..net/
ECH8663R no. a1184-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit r ds (on)1 i d =4a, v gs =4.5v 10.5 15.5 20.5 m static drain-to-source on-state resistance r ds (on)2 i d =4a, v gs =4.0v 11 16 21 m r ds (on)3 i d =2a, v gs =3.1v 12 17.5 23 m r ds (on)4 i d =2a, v gs =2.5v 12 20 28 m turn-on delay time t d (on) see specified test circuit. 320 ns rise time t r see specified test circuit. 850 ns turn-off delay time t d (off) see specified test circuit. 4200 ns fall time t f see specified test circuit. 1800 ns total gate charge qg v ds =10v, v gs =4.5v, i d =8a 12.3 nc gate-to-source charge qgs v ds =10v, v gs =4.5v, i d =8a 2.4 nc gate-to-drain ?iller?charge qgd v ds =10v, v gs =4.5v, i d =8a 2.8 nc diode forward voltage v sd i s =8a, v gs =0v 0.75 1.2 v package dimensions electrical connection unit : mm (typ) 7011a-003 switching time test circuit pw=10 s d.c. 1% p. g 50 g s d i d =4a r l =3.75 v dd =15v v out ECH8663R v in 4.5v 0v v in r g r g =1k 8765 1234 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain 6 : drain 7 : drain 8 : drain top view 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain 6 : drain 7 : drain 8 : drain sanyo : ech8 1 4 85 0.15 0 to 0.02 0.25 0.25 2.8 2.3 0.65 2.9 0.3 0.9 0.07 top view bottom view www.datasheet.co.kr datasheet pdf - http://www..net/
ECH8663R no. a1184-3/4 gate-to-source voltage, v gs -- v r ds (on) -- v gs gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a ambient temperature, ta -- c r ds (on) -- ta drain current, i d -- a forward transfer admittance, ? y fs ? -- s ? y fs ? -- i d diode forward voltage, v sd -- v source current, i s -- a i s -- v sd static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m 0 it13613 0.1 0.4 0.5 0.2 0.3 0.6 0.7 0.8 0.9 26 4810 0 10 30 20 40 50 60 80 70 90 100 it13614 it13615 it13616 0.001 0.01 7 5 3 2 0.1 7 5 3 2 2 1.0 7 5 3 2 1.0 2 3 10 7 5 0.1 57 23 1.0 2 ta= -- 2 5 c 75 c 25 c v ds =10v --25 c 25 c ta=7 5 c v gs =0v 10 57 3 10 7 5 3 0 it13612 0 0.5 1.0 1.5 2.0 2.5 1 4 7 8 9 2 5 3 6 10 --25 c ta=75 c 25 c v ds =10v ta=25 c i d =1.5a 3.0a sw time -- i d v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v switching time, sw time -- ns drain current, i d -- a 2 2 1000 10000 7 5 3 7 5 3 0.01 2 0.1 1.0 357 2357 it13680 v dd =10v v gs = 4.5 v t d (off) t d (on) t r t f 10 23 57 01 3 5 7 9 2 4 6 8 10 11 12 13 0 0.5 1.5 2.5 3.5 1.0 2.0 3.0 4.0 4.5 it13681 v ds =10v i d =8a drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a 0 0 1 2 3 4 5 6 7 8 9 10 0.2 0.3 0.5 0.1 0.4 it13806 v gs =1.5v 2.5v 4.0v 10.0v 3.1v 4.5v --60 --20 --40 0 60 40 20 100 80 120 140 160 5 10 20 15 25 30 35 40 v gs =3.1v, i d =1.5a v gs =2.5v, i d =1.5a v gs =4.0v, i d =3.0a v gs =4.5v, i d =3.0a www.datasheet.co.kr datasheet pdf - http://www..net/
ECH8663R no. a1184-4/4 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. ps note on usage : since the ECH8663R is a mosfet product, please avoid using this device in the vicinity of highly charged objects. this catalog provides information as of july, 2008. specifications and information herein are subject to change without notice. ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w it13683 0 0 20 40 0.4 60 80 100 120 140 160 1.0 1.4 1.5 1.6 0.2 0.8 0.6 1.2 1unit total dissipation when mounted on ceramic substrate (900mm 2 ? 0.8mm) it13682 2 2 3 5 7 0.1 2 3 5 7 1.0 0.01 0.01 0.1 57 23 2 1.0 57 32 10 57 33 25 operation in this area is limited by r ds (on). pw 10 s 100 s 100ms d c operation 10m s 1ms 2 3 5 7 3 2 5 7 10 100 i d p = 60 a i d = 8 a a s o drain-to-source voltage, v ds -- v drain current, i d -- a ta=25 c single pulse when mounted on ceramic substrate (900mm 2 ? 0.8mm) 1unit www.datasheet.co.kr datasheet pdf - http://www..net/
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